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Ballistic transistor
Ballistic Transistors are electronic devices currently being developed for high-speed integrated circuits, which is a set of circuits bounded on semiconductor material. They use electromagnetic forces instead of a logic gate, a device used to perform solely on specified inputs, to switch the forces of electrons. The unique design of this transistor includes individual electrons bouncing off of wedge-shaped obstacles called deflectors.〔(【引用サイトリンク】first=Jonathan )〕 Initially impelled by the circuits electric field, electrons proceed on their respective paths via this electromagnetic deflection. Electrons are then able to travel without being scattered by atoms or defects thus producing an increased transit time. With an increased transit time, the ballistic transistor will be able to produce longer and more effective results than the standard transistor today.
== Purpose ==
A ballistic transistor would be significant in acting as both a linear amplifier and a switch for current flow on electronic devices. A transistor used as a linear amplifier helps heighten a signal on a device. Additionally, a transistor used as a switch for current flow helps maintain digital logic and memory on devices. A transistor's switching speed greatly affects how fast charge carriers-typically electrons-can cross from one region to the next. For this reason, researchers want to use ballistic action to improve the charge carrier's traveling time and speed. A standard transistor is used to amplify electronic power and signals. However, ballistic transistors will be able to fulfill its purpose and last longer than standard transistors because of its continuous flow of electrons. With this, the transistors should also be able to withstand immense amounts of heat, or rather perform faster in order to avoid drawbacks.〔(【引用サイトリンク】first=Jonathan )〕
抄文引用元・出典: フリー百科事典『 ウィキペディア（Wikipedia）』
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